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PEMZ1 Dataheets PDF



Part Number PEMZ1
Manufacturers NXP
Logo NXP
Description NPN/PNP general purpose transistors
Datasheet PEMZ1 DatasheetPEMZ1 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ1 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ1 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Complementary MOSFET driver for switch mode power supply • Complementary driver for audio amplifiers. DESCRIPTION NPN/PNP transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PEMZ1 MARKING CODE FZ 1 Top view TR1 handbook, halfpage 6 PEMZ1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 5 4 6 5 4 TR2 2 3 MAM456 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 40 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C Philips Semiconductors Product specification NPN/PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − 120 − TYP. − − − − − − − − PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 PEMZ1 UNIT K/W MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat fT Cc collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage transition frequency collector capacitance TR1 (NPN) TR2 (PNP) Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C VEB = 4 V; IC = 0 VCE = 6 V; IC = 1 mA IC = 50 mA; IB = 5.0 mA; note 1 100 10 100 − 200 − 1.5 2.2 mV MHz pF pF nA µA nA IC = 2 mA; VCE = 12 V; f = 100 MHz 100 IE = ie = 0; VCB = 12 V; f = 1 MHz − − 2001 Nov 07 3 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ1 handbook, halfpage 400 MHC005 handbook, halfpage 400 MHC004 hFE 300 hFE 300 200 200 100 100 0 10−1 1 10 102 IC (mA) 103 0 −10−1 −1 −10 −102 −103 IC (mA) TR1 (NPN); VCE = 5 V. TR2 (PNP); VCE = −5 V. Fig.2 DC current gain as a function of collector current; typical values Fig.3 DC current gain as a function of collector current; typical values 2001 Nov 07 4 Philips Semiconductors Product specification NPN/PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 6 leads PEMZ1 SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 w M A Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2001 Nov 07 5 Philips Semiconductors Product specification NPN/PNP general purpose transistors DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PEMZ1 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data shee.


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