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PF00105A Dataheets PDF



Part Number PF00105A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description MOS FET Power Amplifier Module for AMPS Handy Phone
Datasheet PF00105A DatasheetPF00105A Datasheet (PDF)

PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature St.

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PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.5 20 –30 to +100 –30 to +100 2 Unit V A V mW °C °C W PF00105A Electrical Characteristics (Tc = 25°C) Item Frequency range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Symbol f I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout Min 824 — 45 — — — 1.0 Typ — — 48 –40 –40 1.5 1.1 Max 849 20 — –30 –30 3.0 — Unit MHz µA % dBc dBc — W Pin = +8 dBm, V DD = 4.6 V, VAPC = 3 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.6 V, VAPC = 0.1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 3 : 1 All phases Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 10 : 1 All phases Test Condition — VDD = 7 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.6 V, Pout = 1 W (at APC controlled) RL = Rg = 50Ω, Tc = 25°C Isolation — — –20 +6 dBm Stability — No parasitic oscillation — Load VSWR tolerance — No parasitic oscillation — 2 PF00105A Characteristic Curves ηT vs. Tc Pin=+7dBm Vdd=4.6V Pout=1W 55 824MHz 849MHz 60 ηT (%) 50 45 40 −50 0 Tc (°C) Pout vs. Tc 50 100 1.6 Pin=+7dBm Vdd=4.6V 1.5 Vapc=2.9V 1.4 Pout(1) (W) 1.3 1.2 1.1 1 0.9 0.8 −50 824MHz 849MHz 0 Tc (°C) 50 100 3 PF00105A Pout vs. Pin (1) 31.8 Vdd=4.6V Vapc=2.9V Tc=−30°C 31.6 Pout(1) (dBm) 824MHz 836.5MHz 849MHz 31.4 31.2 31 4 6 Pin (dBm) Pout vs. Pin (2) 31.4 Vdd=4.6V Vapc=2.9V Tc=25°C 31.2 Pout(1) (dBm) 824MHz 836.5MHz 849MHz 8 10 31 30.8 30.6 4 6 Pin (dBm) 8 10 4 PF00105A Pout vs. Pin (3) 31 Vdd=4.6V Vapc=2.9V Tc=60°C 30.8 Pout(1) (dBm) 824MHz 836.5MHz 849MHz 30.6 30.4 30.2 4 6 Pin (dBm) Id vs. Vapc (1) 700 Pin=+7dBm Vdd=4.6V 600 Tc=−30°C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 4 4.5 5 8 10 5 PF00105A Id vs. Vapc (2) 700 Pin=+7dBm Vdd=4.6V 600 Tc=25°C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) Id vs. Vapc (3) 700 Pin=+7dBm Vdd=4.6V 600 Tc=60°C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 4 4.5 5 2.5 4 4.5 5 6 PF00105A Pout vs. Vapc (1) 40 Pin=+7dBm Vdd=4.6V 30 Tc=−30°C 20 Pout (dBm) 10 0 −10 −20 −30 −40 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 824MHz 836.5MHz 849MHz 4 4.5 5 Pout vs. Vapc (2) 40 Pin=+7dBm Vdd=4.6V 30 Tc=25°C 20 Pout (dBm) 10 0 −10 −20 −30 −40 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 824MHz 836.5MHz 849MHz 4 4.5 5 7 PF00105A Pout vs. Vapc (3) 40 Pin=+7dBm Vdd=4.6V 30 Tc=60°C 20 Pout (dBm) 10 0 −10 −20 −30 −40 0 0.5 1 1.5 2 2.5 3 Vapc (V) Pout vs. Vdd (1) 34 f=824MHz Pin=+7dBm Tc=25°C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32 2.5 824MHz 836.5MHz 849MHz 4 4.5 5 31 30 29 3.5 4 4.5 5 Vdd (V) 5.5 6 8 PF00105A Pout vs. Vdd (2) 34 f=836.5MHz Pin=+7dBm Tc=25°C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32 31 30 29 3.5 4 4.5 5 Vdd (V) Pout vs. Vdd (3) 5.5 6 34 f=849MHz Pin=+7dBm Tc=25°C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32 31 30 29 3.5 4 4.5 5 Vdd (V) 5.5 6 9 PF00105A Package Dimensions Unit: mm 1.8 ± 0.2 4 8.0 ± 0.3 (7.8) G G 3 1 G G 2 3 G G G 2 (Upper side) 4 13.75 ± 0.3 (9.6) (3.7) (2.1) 1 G G 2 8.0 ± 0.3 1 G (3.7) 4 G G 3 (1.8)(1.3)(1.8)(1.6)(1.8)(1.3)(1.8) (2.225) (6.875) 13.75 ± 0.3 (Bottom side) (2.975) (6.875) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC EIAJ Weight (reference value) RF-K    10 (2.1) (0.6) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, s.


PET-1903 PF00105A PF0030


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