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PF0030

Hitachi Semiconductor

MOS FET Power Amplifier

PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 :...


Hitachi Semiconductor

PF0030

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Description
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features High stability: Load VSWR = 20 : 1 Low power control current: 400 µA Thin package: 5 mmt Ordering Information Type No PF0030 PF0032 Operating Frequency 824 to 849 MHz 872 to 905 MHz Application AMPS E-TACS Pin Arrangement RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0030 Series Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 3 ±8 20 –30 to +110 –40 to +110 Unit V A V mW °C °C 2 PF0030 Series Electrical Characteristics (Ta = 25°C) Item Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output VSWR Stability Symbol I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Min — 35 — — — Typ — 40 –50 –50 1.5 1.5 Max 500 — –30 –30 3 — Unit µA % dB dB — — — Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled), Zin = 50 Ω, Output VSWR = 20:1 All phases, t = 20 sec Test Condition VDD = 17 V, VAPC = 0 V Pin = 2 mW, VDD = 12.5 V, Pout = 6 W (at APC controlled) Zin = Zout = 50 Ω V...




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