PF01411A

PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C (Z) 4th Edition February 1997 Application For E-GSM class4 880 to 915 MHz For 4.8V nominal battery use Features High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C W PF01411A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 — 40 — — — 3.8 Typ — — — 45 –45 –45 1.5 4.3 Max 915 3.0 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — W Pin = 1 mW, VDD = 4.8 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 4.3 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 1 mW, VDD = 4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 4.8 V, Pout = 3.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 4 to 7 V, Pout ≤ 3.8 W, Vapc ≤ 3 V GSM pulse. Rg = 50 Ω, t = 20sec., Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 10 V, VAPC = 0 V ...