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PF0415A Dataheets PDF



Part Number PF0415A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description MOS FET Power Amplifier Module for PCS 1900 Handy Phone
Datasheet PF0415A DatasheetPF0415A Datasheet (PDF)

PF0415A MOS FET Power Amplifier Module for PCS 1900 Handy Phone ADE-208-473C (Z) 4th Edition August 1997 Application For PCS 1900 class1 1850 to 1910 MHz. Features • • • • 3stage amplifier Small package : 0.2cc High efficiency : 45% Typ High speed switching : 0.9µsec Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Outp.

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Document
PF0415A MOS FET Power Amplifier Module for PCS 1900 Handy Phone ADE-208-473C (Z) 4th Edition August 1997 Application For PCS 1900 class1 1850 to 1910 MHz. Features • • • • 3stage amplifier Small package : 0.2cc High efficiency : 45% Typ High speed switching : 0.9µsec Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 11 3 6 20 –30 to +100 –30 to +100 3 Unit V A V mW °C °C W PF0415A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Pout (2) — tr, tf Min 1850 0.5 — 37 — — — 2.0 1.2 — — Typ — — — 45 –45 –45 1.5 2.4 1.5 –40 0.9 Max 1910 3 100 — –35 –35 3 — — –30 2 Unit MHz V µA % dBc dBc — W W dBm µs Pin = 2 mW, VDD = 4.8 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 4.3 V, VAPC = 3 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 2 mW, VDD =4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 4.8 V, Pout = 1.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 2 mW, VDD = 6 V, Ids ≤ 0.9 A (only pulsed), Pout ≤ 1.8 W (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 11 V, VAPC = 0 V Pin = 2 mW, VDD = 4.8 V, Pout = 1.8 W (at APC controlled), RL = Rg = 50 Ω, Tc = 25°C Test Condition Stability — No parasitic oscillation — 2 PF0415A Pout vs.VAPC 40 30 20 10 Pout (dBm) 0 −10 −20 −30 −40 −50 0 0.5 1.0 1.5 Vdd = 4.8 V Pin = 3 dBm Rg = R1 = 50 Ω Tc = 25°C 2.0 2.5 3.0 1850 MHz 1910 MHz Apc Voltage VAPC (V) ηT vs. VAPC 50 45 40 Efficiency ηT (%) 35 30 25 20 15 10 5 0 0 0.5 1.0 1.5 VAPC (V) 2.0 2.5 3.0 Vdd = 4.8 V Pin = 3 dBm Rg = R1 = 50 Ω Tc = 25°C 1850 MHz 1910 MHz 3 PF0415A Package Dimensions Unit: mm 1.8 ± 0.2 4 8.0 ± 0.3 (7.8) G G 3 1 G G 2 3 G G G 2 (Upper side) 4 13.75 ± 0.3 (9.6) (3.7) (2.1) 1 G G 2 8.0 ± 0.3 1 G (3.7) 4 G G 3 (1.8)(1.3)(1.8)(1.6)(1.8)(1.3)(1.8) (2.225) (6.875) 13.75 ± 0.3 (Bottom side) (2.975) (6.875) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC EIAJ Weight (reference value) RF-K    4 (2.1) (0.6) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi..


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