MOS FET Power Amplifier
PF08103B
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-785C (Z) 4th Edition May...
Description
PF08103B
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-785C (Z) 4th Edition May 1999 Application
Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). For 3.5 V nominal battery use
Features
1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800
PF08103B
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Select and Power Control
Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V
Current of Control Pin
Control Pin VCTL Equivalent Input Circuit Control Current 2 µA Max
VCTL
1 µA Max
Vapc
3 mA Max at 2.2 V
Note: Control current is preliminary value.
2
PF08103B
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.5 3.5 2 4 4 10 −30 to +100 −30 to +100 5 3 Unit V A A V V dBm °C °C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz).
Electrical ...
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