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PFR852

STMicroelectronics

FAST RECOVERY RECTIFIER DIODE

® PFR850→856 FAST RECOVERY RECTIFIER DIODE PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILIT...


STMicroelectronics

PFR852

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Description
® PFR850→856 FAST RECOVERY RECTIFIER DIODE PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ABSOLUTE RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive peak forward current Average forward current* Surge non repetitive forward current Power dissipation * Storage and junction temperature range Maximum lead temperature for soldering during 10s at 4mn from case PFR 850 VRRM VRSM Repetitive peak revrse voltage Non repetitive peak reverse voltage 50 75 851 100 150 852 200 250 854 400 450 856 600 650 V V tp < 20µs Ta = 90°C δ = 0.5 tp = 10ms Sinusoidal Ta = 90°C Value 100 3 100 3.5 - 40 to + 175 - 40 to + 175 230 Unit A A A W °C °C DO-201AD (Plastic) Symbol Parameter Unit August 1998 - Ed: 2A 1/3 PFR850 -> 856 THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead lengh. STATIC ELECTRICAL CHARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C IF = 3A Test Conditions VR = VRRM Min. Typ. Max. 10 250 1.25 V Unit µA RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C VR = 30V IRM Tj = 25°C VR = 30V Test Conditions IF = 1A diF/dt = - 25A/µs IF = 1A diF/dt = -25A/µs PRF 850→854 PRF 8...




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