M29DW640D

M29DW640D 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ASYNCHRONOUS PAGE READ MODE – Page Width 4 Words – Page Access 25, 30ns – Random Access 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – 4 Words / 8 Bytes at-a-time Program MEMORY BLOCKS – Quadruple Bank Memory Array: 8Mbit+24Mbit+24Mbit+8Mbit – Parameter Blocks (at both Top and Bottom) DUAL OPERATIONS – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks PROGRAM/ ERASE SUSPEND and RESUME MODES – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information Figure 1. Packages TSOP48 (N) 12 x 20mm ■ FBGA TFBGA63 (ZA) 7 x 11mm ■ ■ ■ ■ ■ LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 227Eh + 2202h + 2201h ■ ■ ■ ■ ■ August 2004 1/55 M29DW640D TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....