M29F040

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Data Polling and Toggle bits Protocol for P/E.C. Status MEMORY ERASE in BLOCKS – 8 Uniform Blocks of 64 KBytes each – Block Protection – Multiblock Erase ERASE SUSPEND and RESUME MODES LOW POWER CONSUMPTION – Read mode: 8mA typical (at 12MHz) – Stand-by mode: 25µA typical – Automatic Stand-by mode 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E2h Table 1. Signal Names A0-A18 DQ0-DQ7 E G W VCC VSS Address Inputs Data Input / Outputs Chip Enable Output Enable Write Enable Supply Voltage Ground PLCC32 (K) TSOP32 (N) 8 x 20 mm Figure 1. Logic Diagram VCC 19 A0-A18 8 DQ0-DQ7 W E G M29F040 VSS AI01372 November 1999 This is information on a product still in production but not recommended for new designs. 1/31 M29F040 Figure 2A. LCC Pin Connections Figure 2B. TSOP Pin Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29F040 25 17 AI01378 A11 A9 A8 A13 A14 A17 W VCC A18 A16 A15 A12 A7 A6 A5 A4 A12 A15 A16 A18 VCC W A17 1 32 8 9 M29F040 (Normal) 25 24 16 17 AI01379 G...