M29W010B

M29W010B 1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 10µs by Byte typical 8 UNIFORM 16 Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 23h 17 A0-A16 W M29W010B E G 8 DQ0-DQ7 s Figure 1. Logic Diagram s VCC s s VSS AI02747 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/19 M29W010B Figure 2. PLCC Connections Figure 3. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 A11 A9 A8 A13 A14 NC W VCC NC A16 A15 A12 A7 A6 A5 A4 1 32 9 M29W010B 25 8 9 M29W010B 25 24 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 16 17 AI02754 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 A12 A15 A16 NC VCC W NC AI02748 Table 1. Signal Names A0-A16 DQ0-DQ7 E G W VCC VSS NC Addre...