M29W400BB

M29W400BT M29W400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks 44 s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin 1 TSOP48 (N) 12 x 20mm SO44 (M) s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 18 A0-A17 W E G RP M29W400BT M29W400BB 15 DQ0-DQ14 DQ15A–1 BYTE RB VCC s s s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W400BT: 00EEh – Bottom Device Code M29W400BB: 00EFh s s VSS AI02934 April 2000 1/22 M29W400BT, M29W400BB Figure 2. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 Figure 3. SO Connections 12 M29W400BT 37 13 M29W400BB 36 NC RB A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 ...