M58BF008

M58BF008 8 Mbit (256Kb x32, Burst) Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage – Optional VPP = 12V for fast Program and Erase s CONFIGURABLE OPTIONS – Synchronous or Asynchronous write mode – Burst Wrap/No-wrap default – Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times BGA s ACCESS TIME – Synchronous X-Y-Y-Y Burst Read up to 40MHz – Asynchronous Read: 100ns LBGA80 (ZA) 10 x 8 solder balls PQFP80 (D) s s PROGRAMMING TIME: 10µs typical MEMORY BLOCKS – 32 equal Main blocks of 256 Kbit – One Overlay block of 256 Kbit Figure 1. Logic Diagram VDD VDDQ VPP 18 A17-A0 CLK RP 32 DQ31-DQ0 s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F0h – Version Code: 0-7h DESCRIPTION The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The memory features a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an ...