M58BW016BT

M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective Zero Wait-State Burst Read – Synchronous Burst Reads – Asynchronous Page Reads PQFP80 (T) s HARDWARE BLOCK PROTECTION – WP pin Lock Program and Erase BGA s SOFTWARE BLOCK PROTECTION – Tuning Protection to Lock Program and Erase with 64 bit User Programmable Password (M58BW016B version only) LBGA80 (ZA) 10 x 8 ball array s OPTIMIZED for FDI DRIVERS – Fast Program / Erase suspend latency time < 6µs – Common Flash Interface s MEMORY BLOCKS – 8 Parameters Blocks (Top or Bottom) – 31 Main Blocks s LOW POWER CONSUMPTION – 5µA Typical Deep Power Down – 60µA Typical Standby – Automatic Standby after Asynchronous Read s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M58BW016xT: 8836h – Bottom Device Code M58BW016xB: 8835h May 2003 1/63 M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . ....