M58WR128ET

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns FBGA s s SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA60 (ZB) 12.5 x 12mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58WR128ET: 881Eh – Bottom Device Code, M58WR128EB: 881Fh s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK May 2003 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/87 M58WR128ET, M58WR128EB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . ...