M59BW102

M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING TSOP40 (N) 10 x 14mm s s s s s – Unlimited Linear Access Data Output s PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits s LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by s 100,000 PROGRAM/ERASE CYCLES s 20 YEARS DATA RETENTION – Defectivity below 1ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: C1h DESCRIPTION The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The device can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming and Chip Erase are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The M59BW102 features an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package. Figure 1. Logic Diagram VCC 16 A0-A15 W E G ALE M59BW102 16 DQ0-DQ15 VSS AI02763B M...