M5M29F25611VP

MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048+64) bytes. Available sectors of M5M29F25611 are more than 16,057(98% of all sector address) and less than 16,384 sectors. PIN CONFIGURATION(TOP VIEW) GND Vcc DQ0 DQ1 DQ2 DQ3 GND NC NC NC NC NC NC NC NC Vcc DQ4 DQ5 DQ6 DQ7 SC GND GND FEATURES On-board single power supply(Vcc) : Vcc=3.0V to 3.6V Organization AND Flash Memory : (2048+64)bytes x (More than 16,057 sectors) Data register : (2048+64)bytes Multi-level memory cell: 2bit / per memory cell. Automatic programming : Sector program time : 2.5 ms typ. System bus free Address,data latch function Internal automatic program verify function Status data polling function Automatic erase : Single sector erase time : 1.0 ms typ. System bus free Internal automatic erase verify function Status data polling function Erase mode : Single sector erase ((2048+64)byte unit) Fast access time : Serial read First access time : 50µs max. Serial access time : 50ns max. Low power dissipation : ICC2 = 30mA typ. / 50mA max. (Read) ISB2 = 30µA typ. / 50µA max. (Standby) ICC3 = 20mA typ. / 40mA max. ...