M5M29FT800FP

MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I). CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY FEATURES ................................. 524,288 word x 16bit ................................. 1,048,576 word x 8 bit ............................. VCC = 3.3V±0.3V Supply voltage ................................ .............................. 80/100/120ns (Max) Access time Organization Power Dissipation ....................... 108 mW (Max.) Read ....................... 144 mW (Max.) Program/Erase ....................... 0.72 mW (Max.) Standby Deep power down mode ....................... 3.3µW (typ.) Auto program ....................... 7.5ms (typ.) Program Time ................................. 128word Program Unit Auto Erase ................................. 50 ms (typ.) Erase time Erase Unit Boot Block ................................. 8Kword / 16Kbyte x 1 ..........................