M5M29GB161BWG

MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball pitch) . FEATURES Organization .................................1048,576 word x 16bit (M5M29GB/T161BWG) Boot Block M5M29GB161BWG ........................ Bottom Boot M5M29GT161BWG ........................ Top Boot Other Functions Soft Ware Command Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) and Bank(II) Package 7mm x 8.5mm CSP (Chip Scale Package) - 6 x 8 balls, 0.75mm ball pitch ............................. VCC = 2.7~3.6V Supply voltage ................................ Access time .............................. 90ns (Max.) Power Dissipation ................................. 54 mW (Max. at 5MHz) Read (Aft...