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M5M29GT160BVP Dataheets PDF



Part Number M5M29GT160BVP
Manufacturers Mitsubishi
Logo Mitsubishi
Description 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
Datasheet M5M29GT160BVP DatasheetM5M29GT160BVP Datasheet (PDF)

MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other .

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MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T160BVP are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in in 48pin TSOP(I) . FEATURES Organization .................................1048,576 word x 16bit .................................2,097,152 word x 8 bit Boot Block M5M29GB160BVP ........................ Bottom Boot M5M29GT160BVP ........................ Top Boot Other Functions Soft Ware Command Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) and Bank(II) Package 48-Lead, 12mm x 20mm TSOP (type-I) ............................. VCC = 2.7~3.6V Supply voltage ................................ Access time .............................. 80ns (Vcc=3.3V+/-0.3V) 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 54 mW (Max. at 5MHz) Read (After Automatic Power saving) .......... 0.33mW (typ.) Program/Erase .................................126 mW (Max.) ................................. 0.33mW (typ.) Standby Deep power down mode ....................... 0.33mW (typ.) Auto program for Bank(I) ................................. 4ms (typ.) Program Time Program Unit .........................1word/1byte (Byte Program) (Page Program) ......................... 128word/256byte Auto program for Bank(II) ................................. 4ms (typ.) Program Time ................................. 128word/256byte Program Unit Auto Erase ................................. 40 ms (typ.) Erase time Erase Unit Bank(I) Boot Block ..................... 16Kword/32Kbyte x 1 .............. Parameter Block 16Kword/32Kbyte x 7 ...................... 32Kword/64Kbyte x 28 Bank(II) Main Block Program/Erase cycles APPLICATION Code Strage Digital Cellular Phone Telecommunication Mobile Computing Machine PDA (Personal Digital Assistance) Car Navigation System Video Game Machine ......................................... 100Kcycles PIN CONFIGURATION (TOP VIEW) 160BVP A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RP# NC WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 160BVP A16 BYTE# GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND CE# A0 NC : NO CONNECTION M5M29GB/T 160BVP 37 36 35 34 33 32 31 30 29 28 27 26 25 Outline 48pin TSOP type-I (12 X 20mm) VP(Normal bend) 1 Sep 1999. Rev2.0 MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY BLOCK DIAGRAM ADDRESS INPUTS A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CE# OE# WE# WP# RP# BYTE# RY/BY# 128 WORD PAGE BUFFER Main Block 32KW VCC (3.3V) 28 Bank(II) GND (0V) Main Block Parameter Block7 Parameter Block6 Parameter Block5 Parameter Block4 Parameter Block3 Parameter Block2 Parameter Block1 Boot Block X-DECODER Bank(I) 32KW 16KW 16KW 16KW 16KW 16KW 16KW 16KW 16KW Y-DECODER Y-GATE / SENSE AMP. STATUS / ID REGISTER MULTIPLEXER CHIP ENABLE INPUT OUTPUT ENABLE INPUT WRITE ENABLE INPUT WRITE PROTECT INPUT RESET/POWER DOWN INPUT BYTE ENABLE INPUT READY/BUSY OUTPUT CUI WSM INPUT/OUTPUT BUFFERS DQ15/A-1 DQ14DQ13 DQ12 DQ3DQ2 DQ1DQ0 DATA INPUTS/OUTPUTS M5M29GB/T160BVP (8/16 bit version) 2 Sep 1999. Rev2.0 MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY FUNCTION The M5M29GB/T160BVP includes on-chip program/erase control circuitry. The Write State Machine (WSM) controls block erase and byte/page program operations. Operational modes are selected by the commands written to the Command User Interface (CUI). The Status Register indicates the status of the WSM and when the WSM successfully completes the desired program or block erase operation. A Deep Powerdown mode is enabled when the RP# pin is at GND, minimizing power consumption. Read The M5M29GB/T160BVP has three read modes, which accesses to the memory array, the Device Identifier and the Status Register. The appropriate read command are required to be written to the CUI. Upon initial device powerup or after exit from deep powerdown, the M5M29GB/T160BVP automatically resets to read array mode. In the read array mode, low le.


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