M5M467800BJ

(Rev. 1.1) MITSUBISHI LSIs M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation. The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type name M5M467400BXX-5,5S M5M467800BXX-5,5S M5M467400BXX-6,6S M5M467800BXX-6,6S M5M465400BXX-5,5S M5M465800BXX-5,5S M5M465400BXX-6,6S M5M465800BXX-6,6S Address Power RAS OE CAS Cycle access access access access dissipatime tion time time time time (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW) Type name M5M465160BXX-5,5S M5M465160BXX-6,6S Power Address RAS CAS OE Cycle dissipaaccess access access access time time tion time time time (max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW) 50 60 50 60 13 15 13 15 25 30 25 30 13 15 13 15 ...