M5M51008BP-70L

1997-1/21 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available. VP,KV(normal lead bend type package),RV,KR(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. PIN CONFIGURATION (TOP VIEW) NC 1 A16 2 A14 3 A12 4 5 A7 6 A6 7 A5 8 A4 9 A3 A2 10 A1 11 A0 12 DQ1 13 DQ2 14 DQ3 15 GND 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ADDRESS INPUTS VCC ADDRESS A15 INPUT SELECT S2 CHIP INPUT CONTROL W WRITE INPUT A13 A8 ADDRESS INPUTS A9 A11 ENABLE OE OUTPUT INPUT ADDRESS A10 INPUT SELECT S1 CHIP INPUT DQ8 DQ7 DQ6 DATA INPUTS/ M5M51008BFP FEATURES Type name M5M51008BFP,VP,RV,KV,KR-70VL M5M51008BFP,VP,RV,KV,KR-10VL M5M51008BFP,VP,RV,KV,KR-12VL M5M51008BFP,VP,RV,KV,KR-15VL M5M51008BFP,VP,RV,KV,KR-70VLL M5M51008BFP,VP,RV,KV,KR-10VLL M5M51008BFP,VP,RV,KV,KR-12...