Ver. 1.1 MITSUBISHI LSIs
M5M51008DFP,VP,RV,KV,KR -55H, -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTIO...
Ver. 1.1 MITSUBISHI LSIs
M5M51008DFP,VP,RV,KV,KR -55H, -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film
transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW)
NC 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 DQ1 13 DQ2 14 DQ3 15 GND 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
ADDRESS INPUTS
FEATURES
Type name
M5M51008DFP,VP,RV,KV-55H M5M51008DFP,VP,RV,KV-70H
Access time (max)
Power supply current Active (1MHz) (max) stand-by (max)
DATA INPUTS/ OUTPUTS
VCC ADDRESS A15 INPUT CHIP SELECT S2 INPUT CONTROL W WRITE INPUT A13 A8 ADDRESS INPUTS A9 A11 ENABLE OE OUTPUT INPUT ADDRESS A10 INPUT SELECT S1 CHIP INPUT DQ8 DQ7 DQ6 DATA INPUTS/ DQ5 OUTPUTS DQ4
Outline 32P2M-A(FP)
A11 A9 A8 A13 W S2 A15 VCC NC A1...