M5M5256DVP-15VLL-I

'97.4.7 MITSUBISHI LSIs M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I, -10VXL-I,-12VXL-I,-15VXL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. PIN CONFIGURATION (TOP VIEW) A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 M5M5256DFP -I FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) 100ns 120ns 150ns 100ns 120ns 150ns 20mA (Vcc=3.6V) Outline 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5 6 A4 7 A3 A10 21 /S 20 DQ8 19 DQ7 18 DQ6 17 DQ5 16 DQ415 GND 14 DQ3 13 DQ2 12 DQ1 11 A0 10 A1 9 A2 8 M5M5256DFP,VP,RV-10VLL M5M5256DFP,VP,RV-12VLL M5M5256DFP,VP,RV-15VLL M5M5256DFP,VP,RV-10VXL M5M52...