4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
2001.04.16
Ver. 2.0
MITSUBISHI LSIs
M5M5Y416CWG -85HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Those are s...
Description
2001.04.16
Ver. 2.0
MITSUBISHI LSIs
M5M5Y416CWG -85HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
The M5M5Y416C is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology . The M5M5Y416C is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5Y416CWG is packaged in a CSP (chip scale package), with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm. It giv es the best solution f or a compaction of mounting area as well as f lexibility of wiring pattern of printed circuit boards. Version, Operating temperature Part name -
FEATURES
Single 1.65~2.3V power supply Small stand-by current: 0.2µA (2.0V, ty p.) No clocks, No ref resh Data retention supply v oltage =1.5V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.18µm CMOS Package: 48ball 7.0mm x 8.5mm CSP
Power Supply
Access time
max.
Activ e current Icc1 25°C 40°C 25°C 40°C 70°C 85°C (2.3V, max) Stand-by c urrent (µA) Ratings (max.) * Ty pical
30mA (10MHz) 3mA (1MHz)
I-version
-40 ~ +85°C
M5M5Y416CWG -85HI 1.65 ~ 2.3V
85ns
0.2
0.4
1
2
8
15
* Typical parameter indicate...
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