M5M5Y816WG-85HI

2001.05.22 Ver. 0.1 MITSUBISHI LSIs Preliminary M5M5Y816WG -70HI, -85HI Notice: This is not a final specification. Some parametric limits are subject to change. 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM Those are summarized in the part name table below. DESCRIPTION The M5M5Y816 is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology . The M5M5Y816 is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5Y816WG is packaged in a CSP (chip scale package), with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm. It giv es the best solution f or a compaction of mounting area as well as f lexibility of wiring pattern of printed circuit boards. Version, Operating temperature Part name - FEATURES Single 1.65~2.3V power supply Small stand-by current: 0.5µA (2.0V, ty p.) No clocks, No ref resh Data retention supply v oltage =1.3V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.18µm CMOS Package: 48ball 7.5mm x 8.5mm CSP Power Supply Access time max. 70ns Activ e current Icc1 25°C 40°C 25°C 40°C 70°C 85°C (2.3V, max) Stand-by c urrent (µA ) Ratings (max.) * Ty pical 30mA (10MHz) 3mA (1MHz...