Document
MITSUBISHI SEMICONDUCTORS
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M63991FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES ¡FLOATING SUPPLY VOLTAGE ................................... 600V ¡OUTPUT CURRENT ............................................. ± 500mA ¡HALF BRIDGE DRIVER ¡SOP-16 APPLICATIONS PDP. HID lamp. MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
LO 1 GND
2
16 15 14 13 12 11 10 9
NC GND LIN NC HIN VDD NC NC
VCC 3 NC 4 NC 5 VS 6 VB 7 HO 8
PACKAGE TYPE 16P2N
M63991FP
NC:NO CONNECTION
BLOCK DIAGRAM
VB
UV DETECT FILTER
VDD
HV LEVEL SHIFT
R
Q
R INTER LOCK
HO
HIN
VDD/ VCC LEVEL SHIFT
S PULSE GEN
VS
VCC
UV DETECT FILTER
R
Q
LO LIN
DELAY S
GND
GND
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol VB VS VHO VCC VLO VDD VIN dVS/dt Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board Conditions Ratings –0.5~624 VB–24 ~ VB+0.5 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ 7 –0.5 ~ VDD+0.5 ± 50 0.89 8.9 45 –20 ~ 125 –20 ~ 75 –40 ~ 125 Unit V V V V V V V V/ns W mW/°C °C/W °C °C °C
RECOMMENDED OPERATING CONDITIONS
Symbol VB VS VCC VDD VIN Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage Logic Supply Voltage Logic Input Voltage HIN, LIN Test Conditions Min. VS+13.5 –5 13.5 4.5 0 Limits Typ. — — — — — Max. VS+20 500 20 5.5 VDD Unit V V V V V
FUNCTION TABLE
HIN L L H H X ! L H LIN L H L H L H X ! VBS UV H H H H L L H H VCC UV H H H H H H L L HO L L H L L L L (Note) H(Note) LO L H L L L H L L LO = OFF, HO = OFF LO = ON, HO = OFF LO = OFF, HO = ON LO = OFF, HO = OFF, LIN = HIN = H simultaneously LO = OFF, HO = OFF, VBS UV tripped LO = ON, HO = OFF, VBS UV tripped LO = OFF, HO = OFF, VCC UV tripped LO = OFF, HO = ON, VCC UV tripped Behavioral state
Note : “L” state of VBS UV and VCC UV mean that UV trip voltage. Even VCC UV is tripped, HO state is not changed. When VCC is lower than UV trip voltage, HIN state can not be propagated to HO.
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS=15V, VDD=5V unless otherwise specified)
Symbol IFS IBS ICC IDD VOH VOL VIH VIL IIH IIL VBSUVT VBSUVR tVBSUV VCCUVT VCCUVR tVCCUV IOH IOL ROH ROL tdLH(HO) tdHL(HO) tr(HO) tf(HO) tdLH(LO) tdHL(LO) tr(LO) tf(LO) tdMon tdMoff Parameter Floating Supply Leakage Current VBS standby Current VCC standby Current VDD standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Trip Voltage VBS Supply UV Reset Voltage VBS Supply UV Filter Time VCC Supply UV Trip Voltage VCC Supply UV Reset Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On resistance Output Low Level On resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off VO=0V, VIN=5V, PW<10µs VO=15V, VIN=0V, PW<10µs IO=–200mA, ROH=(VOH-VO)/IO IO=200mA, ROL=VO/IO CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between LO – GND CL=1000pF between LO – GND CL=1000pF between LO – GND CL=1000pF between LO – GND |tdLH(HO)-tdLH(LO)| |tdHL(HO)-tdHL(LO)| IO=0A, LO, HO IO=0A, LO, HO HIN, LIN HIN, LIN VIN=5V VIN=0V Test conditions VB=VS=600V Min. — 0.2 0.2 — 13.8 — 2.1 0.6 — — 9.5 10.0 — 9.5 10.0 — — — — — 250 230 — — 250 230 — — — — Limits Typ. — 0.5 0.5 — 14.4 — 3.0 1.5 25 — 10.5 11.0 7.5 10.5 11.0 7.5 –0.5 0.5 40 20 300 280 80 60 300 280 80 60 — — Max. 1.0 1.0 1.0 100 — 0.1 4.0 1.9 75 1.0 11.5 12.0 — 11.5 12.0 — — — — — 350 330 — — 350 330 — — 30 30 Unit µA mA mA µA V V V V µA µA V V µs V V µs A A Ω Ω ns ns ns ns ns ns ns ns ns ns
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
LEAD DEFINITIONS
Lead symbol LO GND VCC VS VB HO VDD HIN LIN Description Low side gate drive output Ground Low side supply High side floating supply (minus si.