M68701M

ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68701M Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile D im e n s i o n s i n m m O U T L IN E D R A W I N G B L O C K D IAG R A M 60.5 +/-1 57.5 +/-0.5 50.2+/-1 2-R1.6 +0.2 0 11+/-0.5 14+/-0.5 2 3 1 4 5 1 2 phai 0.45 +/-0.2 3 4 5 6+/-1 8.3 +/-1 21.3 +/-1 43.3 +/-1 51.3 +/-1 PIN: 1 P in : R F IN P U T 2 VGG : GATE BIAS SUPPLY 3 V D D : D R A IN B I A S S U P P L Y 4 PO : RF OUTPUT 5 G N D : FIN 2.3+/-0.3 3.4+0.8 -0.4 H11 MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS VGG<5V,ZG=ZL=50 ohms f=860-915MHz,ZG=ZL=50 ohms f=860-915MHz,ZG=ZL=50 ohms f=860-915MHz,ZG=ZL=50 ohms RATINGS 17 5.5 10 10 -30 to +100 -40 to +110 UNIT V V mW W deg. C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIMITS MIN MAX 860 915 6 35 -30 4 No degradation or destroy UNIT MHz W % dBc - VDD=12.5V,VGG=5V,Pin=1mW VDD=12.5V, Pout=6W (VGG adjust) Pin=1mW VDD=15.2V,Pin=1mW,Po=6W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS AR...