Document
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2 26.6±0.2 21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.5±0.1
1 5 1 2 3 4
4 5
0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3 30 Max 870 Unit MHz W % dBc
VDD=7.2V, VGG=3.5V, Pin=50mW ZG=ZL=50Ω, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1
-28 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 7 6 5 4 3 2 ρin PO ηT 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT
20 VDD=7.2V VGG=3.5V 1 Pin=50mW 10 ZG=ZL=50 Ω 0 0 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 ηT 5 10.0 PO 3 1.0 f=870MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 2 1 10.0 4 100.0 6
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 50 ηT 40 30 PO 20 10 f=806MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 Ω 1.5 2.0 2.5 3.0 3.5 4.0
0 1.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 6 50 5 4 PO 3 2 1 0 1.0 20 ηT 40 30
OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 8 6 ηT 70 60 50 40 30 PO f=806MHz VGG=3.5V Pin=50mW ZG=ZL=50Ω 20 10
10 f=870MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 Ω 1.5 2.0 2.5 3.0 3.5 4.0
4 2
0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V)
GATE SUPPLY VOLTAGE VGG (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 ηT 8 6 4 PO 2 f=870MHz VGG=3.5V Pin=50mW ZG=ZL=50Ω 40 30 20 10 70 60 50
0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
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