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M68757L Dataheets PDF



Part Number M68757L
Manufacturers Mitsubishi
Logo Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Datasheet M68757L DatasheetM68757L Datasheet (PDF)

MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power .

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MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3 30 Max 870 Unit MHz W % dBc VDD=7.2V, VGG=3.5V, Pin=50mW ZG=ZL=50Ω, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1 -28 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 7 6 5 4 3 2 ρin PO ηT 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT 20 VDD=7.2V VGG=3.5V 1 Pin=50mW 10 ZG=ZL=50 Ω 0 0 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 ηT 5 10.0 PO 3 1.0 f=870MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 2 1 10.0 4 100.0 6 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 50 ηT 40 30 PO 20 10 f=806MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 Ω 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 6 50 5 4 PO 3 2 1 0 1.0 20 ηT 40 30 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 8 6 ηT 70 60 50 40 30 PO f=806MHz VGG=3.5V Pin=50mW ZG=ZL=50Ω 20 10 10 f=870MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 Ω 1.5 2.0 2.5 3.0 3.5 4.0 4 2 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V) GATE SUPPLY VOLTAGE VGG (V) Nov. ´97 MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 ηT 8 6 4 PO 2 f=870MHz VGG=3.5V Pin=50mW ZG=ZL=50Ω 40 30 20 10 70 60 50 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V) Nov. ´97 .


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