M68772

ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68772 Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile D i m e n s io n s i n m m O U T L IN E D R A W IN G B L O C K D IA G R A M 6 0 .5 + /-1 5 7 .5 + /-0 .5 5 0 .2 + /-1 + 0 .2 2 -R 1 .6 0 1 1 + /-0.5 1 4 + /-0.5 2 3 1 4 5 1 2 3 4 5 1 0 + /-1 φ 0 .4 5 + /-0 .2 8 .3 + /-1 2 1 .3 + /-1 4 3 .3 + /-1 5 1 .3 + /-1 P IN : 1 P in : R F IN P U T 2 V G G : G A T E B IA S S U P P L Y 3 V D D : D R A IN B IA S S U P P L Y 4 PO : RF OUTPUT 5 G N D : F IN 2 .3 + /-0 .3 3 .4 + 0 .8 -0.4 H11 MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS VGG<5V,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms RATINGS 17 5.5 10 20 -30 to +100 -40 to +100 UNIT V V mW W deg. C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in Switching Time PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR tr, tf TEST CONDITIONS LIMITS MIN MAX 890 915 13 35 -30 4 2.0 No parasitic oscillation No degradation or destroy UNIT MHz W % dBc micro sec - VDD=12.5V, VGG=4V, Pin=2mW VDD=12.5V, Pin=2mW Po=13W (VGG adjust) Po=13W(VGG adjust)...