MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS2222/D
General Purpose Transistors
NPN Silicon
COLLEC...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS2222/D
General Purpose
Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS2222 MPS2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS2222 30 60 5.0 600 625 5.0 1.5 12 – 55 to +150 MPS2222A 40 75 6.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 50 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222 MPS2222A MPS2222 MPS2222A MPS2222 MPS2222A MPS2222A ICBO...