PH101

!\fEe NEe Electronics Inc. PH101 NPN EPITAXIAL DARLINGTON PHOTO TRANSISTOR PHOTO DETECTOR NEPOC SERIES Description The PH101 is a miniature NPN silicon photo transistor having exceptionally stable characteristics and high illuminance sensitivity mounted in a two-terminal MICRODISK package. The spectral response, extending from 4000 to 10,000A, is compatible with daylight, tungsten and gallium arsenide sources. The packaging of this unit permits close spacing in linear arrays. Its low cost and volume producibility open new areas of use anywhere a photo detector is desirable. Features o Lowcost o Low leakage current o Wide spectral response o Convenient MICRODISK package o Wide temperature range o Compact, rugged, light-weight o High sensitivity Applications o Optical switching and encoding o Intrusion alarms o Tape and card reader sensors o Level controls o Motor governors Absolute Maximum Ratings TA = +25°C Collector to Emiller Voltage, VCEO Collector Current, Ic Power Dissipation, PD Junction Temperature, TJ Storage Temperature, TSTG 20V 50mA 100mW 80·C -30·C to +80·C Electro·Optical Characteristics TA = +25°C Limits Parameters Symbal Min Typ Max Unit Test Candltlans Collector to Emiller ICE01 Dark Current 0.5 ~ VCE = 15V, L=O Collector to Emiller Dark Current Collector Saturation Valtage ICE02 VCE(sat) VCE = 15V, 500 ~ L = 0, TA = +80·C 0.7 1.5 V IC = 10mA, L1 = 1000lx Photo Current IL 4 12 mA VfE = 2.0V, L = 100lx Note: 1. Measured with a tungsten ...