PH1090-550S

Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty Features Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1 Description M/A-COM’s PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Broadband Test Fixture Impedance F (MHz) 1030 1090 Z IF (Ω) 4.0 - j3.5 3.6 - j2.7 Z OF (Ω) 1.4 - j1.6 1.1 - j1.9 Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Tota...