PH1090-700B

Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty Rev. 0 PH1090-700B Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Dissipated Power (Standard Pulse Cond.) Dissipated Power (Mode-S Pulse Train) Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT PTOT TSTG Tj Rating 65 3.0 35 2.9 700 -65 to +200 200 Units V V A kW W °C °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing Broadband Test Fixture Impedances F (GHz) TEST FIXTURE INPUT CIRCUIT 50Ω Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50Ω Z IF (Ω) Z OF (Ω) 1.03 1.06 1.09 1.1 –j1.4 1.1 –j1.2 1.0 –j1.0 1.2 –j0.8 1.0 –j0.7 0.8 –j0.7 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Electrical Characteristics at 25ºC Standard Pulse Condition: 32µS Pulse Width, 2% Duty Cycle Peak Power: 700 Watts Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Symbol BVCES ICES RTH(JC) GP η RL VSWR-T IC = 250 mA VCE = 50 V VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µ...