an AMP comDanv
=7
=
E
Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz
Features
NPN ...
an AMP comDanv
=7
=
E
Radar Pulsed Power
Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
f
_ .137* 919 ~ (3.~8S.25) I 1
.004=.001 (.10+.03)
UNLESS
O-HERW:SE
NOTED.
TLERANCES
ARE
INCHES (M!LL,METERS
=.005' ~,13MM)
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units Test Conditions
Collector-Emitter Collector-Emitter
Breakdown Voltage Leakage Current
BV,,, ICES R THUCI P OUT G. I sic RL VSWR-T VSWR-S I
65
1.0 8.6
V mA “CIW W dB I % dB -
I,=8 mA vo=40 V,,=28 V,,=28 V,,=28 1 V,,=28 V,,t28 V,,=28 V,,=28 v V, P,,=800 mW, F=l.20,1.30, 1.40 GHz GHz 1.40 GHz 1.40 GHz GHz GHz GHz
Thermal Resistance Output Power Power Gain 1 Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility
4.0 7.0 45 6 I
3:l 1.51
V, P,,=800 mW, F=l.20,1.30,1.40 V, P,.,=800 mW, F=l.20,1.30, V, P,,=800 mW, F=l.20,1.30, V, P,,=800 mW, F=1.20,1.30,1.40 V, P,,=800 mW, Fc1.20, 1.30,1.40
I
V, P,,=800 mW, F=l.20,1.30,1.40
Broadband Test Fixture Impedances
F(GHz)
1.20 1.30
TEST
FIXTLiRE OUTPUT
Z,,(Q)
Z,,(Q)
CIRCK-
-
I -
’
-
EIRZUIT
7.0 - j4.5 6.4 - j3.0 6.0 - jl.5
12.0 + j24 12.5+j21 10.5 + j24 -6 5052
ZDF 50R t I
ZIF’
1.40
-
Specifica...
