PH1516-100

an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Features ___~. - Power Transistor, 1 OOW PH1516-100 Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting ,/ . Absolute Maximum Parameter Ratings at 25°C Symbol Rating “,:,, . Collector-Base Voltage 1 Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation I JunctionTemperature Storage Temperature Thermal Resistance I ( I Vcm V,,, vm ‘c P, TJ TSrG 8.c I 1 I 63 65 3.0 20 233 200 -55 to +150 .75 I I I v v A I I W “C “C “CM’ UNLESS 3THRW:Sf NOTEa TDLi?ANIES PRf INCHES 2 005 WLLI’IETERS i.13W I Electrical Characteristics I Parameter at 25°C 1 Svmbol I 1 Min 1 Max 1 Units 1 Test Conditions 1 Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-EmitterBreakdown Voltace )E&egeakdown Voltage ) BV,,, ICES BV,BV,,, hFE GP % RL I 1 65 4.0 V mA V ) V dB % I,=60 mA’ v,,=30 V’ f-=60 mA’ 22 ) 3.0 15 10 30 ) 120 - ) 1,=6mA’ V,,=5 V, It=1 A’ -lOOW PEP F=lSOO MHz,AF=lOO V,,=26 V, I,,=lOOmA, POUTkHz I DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load MismatchTolerance 3rd Order IMD * Per Side , V,,=26 V. I,,=lOOmA, P,,,,=lOOW PEP F=1500 MHz, AF=lOO kHz -lOOW PEP F=lSOO MHz, AF=lOO kHz V,,=26 V, I,,=1 OOmA,POUT1 V,,=26 V, I,,=lOOmA, P,,,- -lOOW PEP F=1500 MHz, AF=lOO kHz -. -lOOW PEP F=1500 MHz,AF=lOO kHz V...