Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz
Features
l l l l l l
2W
PH1617-2
v2.00
Designed for Linear Amplifier ...
Wireless Bipolar Power
Transistor, 1.6 - 1.7 GHz
Features
l l l l l l
2W
PH1617-2
v2.00
Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
Parameter ( Symbol ( Rating Units
Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature 1 StorageTemperature Thermal Resistance I
VCBO V ES VEBO ‘c PO T, TSTG 6JC
6.5 65
3.0
V V V I A W
.0601003 (1.5.?%08)
2.0
13.5
200
1 -55to+150 13 1
“C
“C “CNV
UNLESS DTHERvIsE NOTED, TDLER*NCES ARE
1
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units
Test Conditions
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-EmitterBreakdownVoltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance 3rd Order IMD (
BV,-, ‘ES BV,,, BV,,,
BVEBO
65
1.0
V mA 1 V V /
V
I,=5 mA V,,=25 V 1 I,=5 mA I,=5 mA, R,,=220Q I,=5 mA V,,& V, I,=200 mA GHz
(
22 30
(
-
3.0 15
10 35 10
I
120
5:l
hFE GP
“rlC
dB % dB dBc
V,,=25 V, lo=25 mA, Po,,=2.0 W, F=l.60,1.65.1.70
V,,=25 V, I,,=25 mA, P,,,=2.0 W, F=l.60, 1.65. 1.70 GHz V,,=25 V, I,,=25 mA, P,,=2.0 W, F=l.60.1.65,1.70 V,,=25 V, I,,=25 mA, P,,e2.0 W, F=l.60,1.65, GHz
RL VS...
