PH1617-60

Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching -28 dBc Typical IMD at 60 Watts PEP Outline Drawing 1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization. The PH1617-60 is packaged in a low cost, non-hermetic ceramic package which has very low thermal impedance. Notes: (unless otherwise specified) 1. Tolerances are: inches ± 0.005” (millimeters ± 0.13mm) Broadband Test Fixture Impedance Absolute Maximum Rating at 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Storage Temperature Junction Temperature Thermal Resistance Symbol VCEO VCES VEBO IC PD Tstg TJ θjc Rating 20 65 3.0 5.8 150 -50 to +150 200 1.0 Units V V V A W °C °C °C/W F (MHz) 1600 1650 1700 Z IF (Ω) 1.5 - j3.6 1.4 - j3.1 1.5 - j2.9 Z OF (Ω) 2.9 - j1.7 2.9 - j1.1 3.0 - j0.5 Electrical Specifications at 25°C Symbol hFE GP Parameter DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load Mismatch To...