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an AMP company
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Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz
Features...
*
an AMP company
,z== i--s = -A= =c
.----== -
= = -
Wireless Bipolar Power
Transistor, 1OW 1.78 - 1.90 GHz
Features
l l l l l
PH1819-10
v2.00 /
,744 :lE.SZ +--, 5s: .,4 22)
Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter BaIlasting
Absolute‘lblaximum ,
Ratings at 25°C I
/
I
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units
Llli-ESS
CTiERWiSE
NOTED.
TOLERANCES
ARE
INCHES (MILLIMETEPS
Z.COL :.I3MM)
Test Conditions
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency input Return Loss Load Mismatch Tolerance 3rd Order IMD
BVcE, ‘ES BV,,, BV,, BVESO hFE GP
‘IC
65 ) 20 30 3.0 15 9.0 40 10 -
2.0 120 3.O:l -28
V ) mA V V V dB % dB dBc
I,=1 0 mA ) if,,=25 v I,=1 0 mA I,=1 0 mA. Q220R IB=l 0 mA V,,=5 V, I,=250 mA V,,=25 V, I,,=1 00 mA, P,,flO V,,=25
V, I,,=100
W, F=l.78 - 1.90 GHz W, F=l.78 - 1.90 GHz
mA, P,,=lO
RL VSWR IMD,
V,,=25 V, I,,=1 00 mA, P,,,=lO W, F=l.78 - 1.90 GHz V,,=25 V, I,,=1 00 mA, POUT=1 0 W, F=l.78 - 1.90 GHz V,,=25 V, lcO=l00 mA, P,,,=lO W PEP, F=l850 MHz, AF=lOO kHz 1 2 LlAD
Typical Optimum Device Impedances
F(GHz) z,,w Zo*o(Q)
1.78
1.85
4.5 + j7.0
5.0 + j7.3
2.5 + j0.2 2.5 + j0 2.6 + 0.2
pq-pzj
1.90
6.0 + j6.1
z:N
Specifi...
