=-r_=
an AMP
company
Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
Designed for Cellular Base Station A...
=-r_=
an AMP
company
Wireless Bipolar Power
Transistor, 1.78 - 1.90 GHz
Features
Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
2W
PH1819-2
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
( Collector-BaseVoltage )Collector-EmmerVoltage Emitter-BaseVoltage CollectorCurrent
1 )
I
V,,, V,,, _-_ VEBO L
1 1
65 65 3.0 2.0
( v-1
I VI V A 1 W “C “C “C/W
I-Power Dissipation
Junction Temperature StorageTemperature Thermal Resistance
1
1
P, TJ T STG 8JC
(
13.5 200 -55 to +150 13
1
Electrical Characteristics
Parameter
at 25°C
Symbol Min
Max 1.0
Units
Test Conditions
Collector-Emitter Breakdown Voltage Collector-EmitterLeakage Current Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency lnout Return Loss Load Mismatch Tolerance 3rd Order IMD
BV,,.
‘CES
65
V mA V V V dB % dB
7
1~5 mA V,,=25 V I,=5 mA I,=5 mA, R,,=220 R I,=5 mA V,,=5 V, I,=200 mA V,,=25 V, I,,=25 mA, Pout=2.0 W, F=1.78,1.85,1.90 GHz V&5 V, I,,=25 mA, Po,f2.0 W, F=l.78, 1.85, 1.9OGHz GHz
BV,Eo BV,., BV,,, hFE GP
‘IC
22 30 3.0 15 10 35 10 -
120 5:l -32
RL VSWR-T IMD,
V-,=25 V. I,,=25 mA, P*,,*=2.0 W, F=l.78,1.85,1.90 V,,=25 V, I,,=25 mA, P,fi2.0
dBc
W, F=1.78,1.85,1.90 GHz
V,,=25 V, I,,=25 mA...