PH1819-2

=-r_= an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz Features Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting 2W PH1819-2 Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units ( Collector-BaseVoltage )Collector-EmmerVoltage Emitter-BaseVoltage CollectorCurrent 1 ) I V,,, V,,, _-_ VEBO L 1 1 65 65 3.0 2.0 ( v-1 I VI V A 1 W “C “C “C/W I-Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 1 P, TJ T STG 8JC ( 13.5 200 -55 to +150 13 1 Electrical Characteristics Parameter at 25°C Symbol Min Max 1.0 Units Test Conditions Collector-Emitter Breakdown Voltage Collector-EmitterLeakage Current Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency lnout Return Loss Load Mismatch Tolerance 3rd Order IMD BV,,. ‘CES 65 V mA V V V dB % dB 7 1~5 mA V,,=25 V I,=5 mA I,=5 mA, R,,=220 R I,=5 mA V,,=5 V, I,=200 mA V,,=25 V, I,,=25 mA, Pout=2.0 W, F=1.78,1.85,1.90 GHz V&5 V, I,,=25 mA, Po,f2.0 W, F=l.78, 1.85, 1.9OGHz GHz BV,Eo BV,., BV,,, hFE GP ‘IC 22 30 3.0 15 10 35 10 - 120 5:l -32 RL VSWR-T IMD, V-,=25 V. I,,=25 mA, P*,,*=2.0 W, F=l.78,1.85,1.90 V,,=25 V, I,,=25 mA, P,fi2.0 dBc W, F=1.78,1.85,1.90 GHz V,,=25 V, I,,=25 mA...