M/A-COM PHI, INC.
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY
OUTLINE DRAWI...
M/A-COM PHI, INC.
PH2729-25M RADAR PULSED POWER
TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY
OUTLINE DRAWING
FEATURES
∗
NPN Silicon Microwave Power
Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature VCES VEBO IC PTOT TSTG Tj 65 3.0 4.0 120 -65 to +200 200
Units
V V A W °C °C
ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min
Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability BVCES ICES RTH(JC) PO GP 65 25 9.2 45 6 -
Max
1.5 1.25 3:1 1.5:1
Units
V mA °C/W W dB % dB IC=10mA VCE=40V
Test Conditions
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
η
RL VSWR-T VSWR-S
BROADBAND TEST FIXTURE IMPEDANCE F (GHz) Z IF (Ω) Z OF (Ω)
2.70 2.80 2.90 38 - j14.4 35 - j16.3 33 - j17....