PH2729430M

= =_ .---‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic MetaUCeramic Package Absolute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage Emitter-Base Voltage I Symbol V ES vm I Rating 63 3.0 12.5 575 1 200 1 1 I Units V v A W “C “C I 1 I ,L”“-.“.” :2.54=.25) Collector Current (Peak) Total Power Dissipation 1 JunctionTemperature StorageTemperature 1 1 ‘c PTPlT T, T,,, t <1.52-'.CS) INCHCS 5.005’ 1 -65 to+200 Electrical Characteristics L&et& Collector-Emitter Collector-Emitter Breakdown Voltage at 25°C 1 Svmbol BV,,, ICES R WJCI P ^,_ ““I 1 Min 65 1 Max 7.5 0.3 1 Units 1 V mA “WW W dB % dB dB I,=40 mA VcE=36 V V,,=36 V-,=36 -- Test Conditions Leakage Current Thermal Resistance Outout Power r~ V, P,N=26 W, F=2.7,2.9 V, P,,=26 ,. GHz GHz GHz GHr GHz GHz GHz GHz 130 7.0 1.0 3:l 2:l W, F=2.7.2.9 Power Gain Collector Efficiency Input Return Loss Overdrive Stabilitv Load Mismatch Tolerance Load Mismatch Stablility GP llr RL OD-S VSWR-T VSWR-S V,,=36 V,,=36 V, P,,=26 W, F=2.7,2.9 V, P,,=26 W, F=2.7,2.9 , 40 6 - Vcc=36 V, P,,=26 W, F=2.7,2.9 VP,=36 V, P,,=26 W, F=2.7.2.9 V,,=36 V, P,,=26 W, F=2.7.2.9 Vccs36 V, P,,=26 W, F=2.7,2.9 This Da...