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Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11...
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Radar Pulsed Power
Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
I .I00 I / I ;2.54>--- ,250
-.152-.x0 (3.86-25) 75.35>-7 ,130 -7(3.30:~
I
I
.034'.031
StorageTemperature
T STG
-65 to +200
“‘2
UNLESS
IT-ERWISE
NCTEC,
TZLESANCES
ARE
INCES :MJLLIMETERS
=.305’ =.!3MW>
Electrical Characteristics
Parameter
Collector-Emitter Collector-Emitter Breakdown Voltage Leakage Current
at 25°C
Symbol
BV,,, ‘Es R TWC, P IN GP
%
Min I
60
Max 1
1.25 1.4
1.74
Units I
V mA “CM’
w I,=1 2.5 mA
lest Conditions I
V,,=36 I’,,=36
V,c=36
V V, P,,,=ll V, P,,,.=ll W, F=3.1,3.25,3.4 W, F=3.1,3.25,3.4 GHz GHz GHz GHz GHz
Thermal Resistance input Power Power Gain Collector Efficiency input Return Loss Load Mismatch Tolerance
8.0
2:l
dB % dB -
V,,=38 I’,,=36 I’,,=36
V, Pour=1 1 W, F=3.1, 3.25,3.4 V. P,,=ll V, P,,,=ll W. F=3.1,3.25,3.4 W, F=3.1,3.25,3.4 1 W, F=3.25 GHz
35
6
RL VSWR-T
-
Vcc=36 V, P,el
Broadband Test Fixture Impedances
F(GHz)
3.10
3.25
I
z,,m
17.5 - j8.5
15.0j8.2
I
z,Fcm
90.0 + j37.0
58.0 + j7.0
A
3.40
13.0 - j8.0
36.0 + j14.5
-
Specifications Subject to Change Without Notice.
...
