PH3135-30M

an AMP =- zE company Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty PH3135-30M 3.1 - 3.5 GHz v2.00 Features l l l l l l l l SJC _ :22 65, -:16.51) 433 <13.:5:-, _ 85: NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter ) Symbol Rating Units Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature VCES VES0 I^ PTOT TJ TST0 -65 65 3.0 3.6 250 200 to +200 V V A w “C “C ,167~ i-110 7:4.24’.25> ,103 C2.54) - F-034’031 Electrical Characteristics Parameter at 25°C Symbol Min Max Units Test Conditions I,=20 Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gajn Collector Efficiency Input Return Loss Load MismatchTolerance Load Mismatch Stability BV,,, ‘CES 65 3.0 0.7 V mA “C/W w mA v,,=40 v Vcc=36 Vcc=36 RTH(JC, POUT GP % V, P,,=6.0 W, F=3.1,3.3,3.5 GHz V. P;,=6.0 W, F=3.1,3.3,3.5 GHz 30 7.0 35 6 - dB o/b V,,=36 V, P,,=6.0 W, F=3.1,3.3, 3.5 GHz Vcc=36 V, P,,=6.0 W, F=3.1,3.3,3.5 GHz RL VSWR-T VSWR-S 3:l dB - V,,=36 V, P,,=6.0 W. F=3.1,3.3,3.5 GHz Vcc=36 - V, P,,=6.0 W, F=3.1,3.3,3.5 GHz 2:l - V,,=36V, P,,=6.0 W, F=3.1,3.3,3.5GHz Broadband Te...