PH3230S

PH3230S N-channel TrenchMOS™ logic level FET M3D748 Rev. 03 — 02 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level compatible s High density mounting s Low gate charge s Very low on-state resistance. 1.3 Applications s DC-to-DC converters s Notebook computers s Switched-mode power supplies s Computer motherboards. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 62.5 W s ID ≤ 100 A s RDSon ≤ 3.2 mΩ. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) gate (g) drain (d) g s mb d Simplified outline Symbol MBB076 1 2 3 4 MBL286 Top view SOT669 (LFPAK) Philips Semiconductors PH3230S N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name PH3230S LFPAK Description Plastic single-ended surface mounted package, 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tj = 25 °C; RGS ≥ 50 Ω; IDS(AL)R = 5 A;...