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PH5416 Dataheets PDF



Part Number PH5416
Manufacturers NXP
Logo NXP
Description PNP high-voltage transistor
Datasheet PH5416 DatasheetPH5416 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH5416 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES • High current (max. 1 A) • High voltage (max. 300 V). APPLICATIONS • Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage PH5416 PINNING PIN 1 2.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH5416 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES • High current (max. 1 A) • High voltage (max. 300 V). APPLICATIONS • Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage PH5416 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −50 mA; VCE = −10 V IC = −10 mA; VCE = −10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 30 15 MIN. MAX. −350 −300 −1 500 120 − MHz V V A mW UNIT 1997 Apr 22 2 Philips Semiconductors Product specification PNP high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. PH5416 MAX. −350 −300 −6 −1 −1 −500 500 150 150 150 V V V A A UNIT mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc Ce fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency CONDITIONS IE = 0; VCB = −280 V IC = 0; VEB = −6 V IC = −50 mA; VCE = −10 V IC = −50 mA; IB = −5 mA IC = −50 mA; IB = −5 mA IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −5 V; f = 1 MHz − − 30 − − − − MIN. MAX. −100 −100 120 −800 −1 15 75 − mV V pF pF MHz UNIT nA nA PARAMETER CONDITIONS VALUE 250 UNIT K/W thermal resistance from junction to ambient note 1 IC = −10 mA; VCE = −10 V; 15 f = 100 MHz 1997 Apr 22 3 Philips Semiconductors Product specification PNP high-voltage transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PH5416 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Apr 22 4 Philips Semiconductors Product specification PNP high-voltage transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PH5416 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Apr 22 5 Philips Semiconductors Product specification PNP high-voltage transistor NOTES PH5416 1997 Apr 22 6 Philips Semiconductors Product specification PNP high-voltage transistor NOTES PH5416 1997 Apr 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bl.


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