PHA3135-130M

Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features q q q q q NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange Absolute Maximum Ratings at 25°C1 Parameter Suppy Voltage Input Power Output Power @ 3.3 GHz Thermal Resistance / Per Transistor Power Dissipation Operating Case Temp. Storage Temperature Absolute Maximum 40V 26.5V 200A 0.24A 400W -30 to 1200°C -40 to +125°C Unless Otherwise Noted, Tolerances Are: Inches ±.005˝ (Millimeters ±13mm) 1. Operation of this device outside of these limits may cause permanent damage. Electrical Characteristics at 25°C Parameter Output Power Output Power Output Power Power Gain Power Gain Power Gain Collector Efficiency Input Return Loss Load VSWR Tolerance Load VSWR Stability Symbol POUT POUT POUT GP GP GP ηC RL VSWR-T VSWR-S Test Conditions VCC=36 V, PIN=21 W, F=3.1 GHz VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 VCC=36 V, PIN=21 W, F=3.3 GHz W, F=3.5 GHz W, F=3.1 GHz W, F=3.3 GHz W, F=3.5 GHz W, F=3.1, 3.3, 3.5 GHz W, F=3.1, 3.3, 3.5 GHz W, F=3.1, 3.3, 3.5 GHz W, F=3.1, 3.3, 3.5 GHz Units W W W dB dB dB % dB Min. 145 130 115 8.4 7.9 7.4 35 6 Max. 3:1 2:1 Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 s 1 Asia/Pacific: Tel. +81 (03) 322...