PHB100N03LT

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 M3D166 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB100N03LT in SOT404 (D2-PAK). 2. Features s s s s s TrenchMOS™ technology Low on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3. Applications c c s DC to DC converters s Synchronous rectification. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol d drain (d) source (s) connected to drain (d) [1] g 2 1 3 MBK116 MBB076 s SOT404 (D2-PAK) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHB100N03LT N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ − − − − 5.0 6.2 Max 25 75 125 175 5.8 7.5 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM I...