PHB12NQ15T

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T QUICK REFERENCE DATA d FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain 1 source SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT428 (DPAK) tab 2 1 23 2 1 3 1 3 drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 150 150 ± 20 12.5 8.8 50 88 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin:2 of ...