Document
Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB130N03LT
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 75 187 175 6 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)1 Drain current (DC)1 Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 30 30 10 75 75 240 187 175 UNIT V V V A A A W ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board TYP. 50 MAX. 0.8 UNIT K/W K/W
1 Current limited by package to 75A from a theoretical value of 130A. December 1997 1 Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. -
PHB130N03LT
MAX. 2
UNIT kV
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; VGS = ±5 V; VDS = 0 V IG = ±1 mA; VGS = 5 V; ID = 25 A Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. 30 27 1.0 0.5 10 TYP. 1.5 0.05 0.02 5 MAX. 2.0 2.3 10 500 1 10 6 11 UNIT V V V V V µA µA µA µA V mΩ mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A ID = 75 A; VDD = 24 V; VGS = 5 V MIN. 20 TYP. 40 92 10 36 5000 1150 500 45.