Limiter/Low Noise Amplifier Die Preliminary Release 8.5 - 12.0 GHz
MA01503D
Limiter/Low Noise Amplifier Die (8.5 - 12.0 GHz)
FEATURES
• • • 8.5 to 12.0 GHz Operation 10W CW Power Handlin...
Description
MA01503D
Limiter/Low Noise Amplifier Die (8.5 - 12.0 GHz)
FEATURES
8.5 to 12.0 GHz Operation 10W CW Power Handling Capability 50Ω Input Impedance
Preliminary Release
Balanced Three Stage LNA with Limiter
Excellent Return Loss Self-Aligned MSAG® MESFET Process
DESCRIPTION
The MA01503D is a balanced, three-stage low noise amplifier and limiter die fabricated using ® M/A-COM’s mature GaAs Self-Aligned MSAG MESFET Process. This product is fully matched to 50 ohms on both the input and the output.
MAXIMUM RATINGS
Rating
(TA = 25 °C unless otherwise noted)
Symbol
Value
DC Drain Supply Voltage DC Gate Supply Voltage
RF Input Power
Junction Temperature Storage Temperature
VDD VGG PIN TJ TSTG
8 -6 15 150
-40 to +150
Unit Vdc
Vdc W °C °C
ELECTRICAL CHARACTERISTICS VDD=5.0 V, VGG=-5.0 V,
Characteristic Frequency Range
T=25 °C, Input and Output Connected to 50 Ω System.
Symbol
Min
Typ
Max
Unit
Gain 1dB Compression Point Gain Flatness (Peak-to-Peak over any 250 MHz band) Noise Figure
Input Third Order Intercept Point Input and Output Return Loss Drain Bias voltage Gate Bias Voltage Drain Supply Current (No RF) Drain Supply Current (Max @ Pin = 10 Watts) Gate Supply Current Power Handling Capability (CW up to 30 minutes continuous exposure)
f G P1db — NF TOI RL VDD VGG IDD IDD IGG PRF
8.5 17 — — 13 — — — — —
— 19 +20 0.6 2.7 8 20 5 -5 — — — 10
12.0 23 1.5 3.5 — — 240 300 45 —
GHz dB dBm dB dB dBm dB VDC VDC mA mA mA W
Specifications subject to change...
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